DTS2012 - Din-Tek

DTS2012 N-Channel MOSFET

N-Channel 20 V (D-S) MOSFET DTS2012 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.037 at VGS = 4.5 V 0.041 at VGS = 2.5 V 0.046 at VGS = 1.8 V ID (A)a 4 3 2 Qg (Typ.) 4 nC SOT-323 G1 3D S2 Top View G D S FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Protection 2000 V HBM • 100 % .

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Typical ESD Protection 2000 V HBM
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Portable Devices - Load Switch - Battery Switch
• Load Switch for Motors, Relays and Solenoids ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °.