Fast Recovery Epitaxial Diode (FRED) DSEI 8-06A DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns VRSM V 640 640 VRRM V 600 600 Type DSEI 8-06A DSEI 8-06AS AC Symbol IFRMS IFAVM IFRM IFSM I2t TVJ TVJM Tstg Ptot Md Weight Conditions TVJ = TVJM TC = 115°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 1.
• International standard package JEDEC TO-220 AC & TO-283 AB
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters and motor control circuits
• Rectifiers in switch mode power supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• High reliability circuit operation.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DSEI8-06A |
IXYS |
Fast Recovery Epitaxial Diode | |
2 | DSEI8-06A |
INCHANGE |
Ultrafast Rectifier | |
3 | DSEI8 |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
4 | DSEI12 |
ETC |
Fast Recovery Epitaxial Diode | |
5 | DSEI12-06A |
Inchange |
Ultrafast Rectifier | |
6 | DSEI12-06A |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
7 | DSEI12-06AS |
IXYS |
Fast Recovery Epitaxial Diode | |
8 | DSEI12-10A |
IXYS |
Fast Recovery Epitaxial Diode | |
9 | DSEI12-10A |
INCHANGE |
Fast Recovery Diode | |
10 | DSEI12-12A |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
11 | DSEI12-12AZ |
IXYS |
Fast Recovery Epitaxial Diode | |
12 | DSEI120 |
IXYS Corporation |
Fast Recovery Epitaxial Diode |