DSEI12 - ETC

DSEI12 Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 12 IFAVM = 14 A VRRM = 600 V trr = 35 ns VRSM V 640 VRRM V 600 Type A C TO-220 AC C A DSEI 12-06A A = Anode, C = Cathode C Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t.

Features

q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q International standard package JEDEC TO-220 AC Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25°C Mounting torque Applications q q q q 62 0.4...0.6 2 q q q Symbol Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 16 A; Characteristic Values typ. max. 5.