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Ultrafast Rectifier FEATURES ·Ultrafast Recovery Time ·Very short recovery time ·Extremely low switching losses ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies and other power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT.
·Ultrafast Recovery Time
·Very short recovery time
·Extremely low switching losses
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in switching power supplies and other power
Switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
IF(AV)
Average Rectified Forward Current
600
V
8
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions
110
A
half-wave, single phase, 6.
DSEI8-06A - IXYS
Fast Recovery Epitaxial Diode (FRED) DSEI 8-06A DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns VRSM V 640 640 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | DSEI8-06AS |
IXYS |
Fast Recovery Epitaxial Diode |
|
| 2 | DSEI8 |
IXYS Corporation |
Fast Recovery Epitaxial Diode |
|
| 3 | DSEI12 |
ETC |
Fast Recovery Epitaxial Diode |
|
| 4 | DSEI12-06A |
Inchange |
Ultrafast Rectifier |
|
| 5 | DSEI12-06A |
IXYS Corporation |
Fast Recovery Epitaxial Diode |
|
| 6 | DSEI12-06AS |
IXYS |
Fast Recovery Epitaxial Diode |
|
| 7 | DSEI12-10A |
IXYS |
Fast Recovery Epitaxial Diode |
|
| 8 | DSEI12-10A |
INCHANGE |
Fast Recovery Diode |
|
| 9 | DSEI12-12A |
IXYS Corporation |
Fast Recovery Epitaxial Diode |
|
| 10 | DSEI12-12AZ |
IXYS |
Fast Recovery Epitaxial Diode |
|
| 11 | DSEI120 |
IXYS Corporation |
Fast Recovery Epitaxial Diode |
|
| 12 | DSEI120-06A |
IXYS Corporation |
Fast Recovery Epitaxial Diode |
|