DSEI12-10A - IXYS

DSEI12-10A Fast Recovery Epitaxial Diode

FRED Fast Recovery Epitaxial Diode Single Diode Part number DSEI12-10A 3 1 DSEI12-10A VRRM = 1000 V I FAV = 12 A t rr = 45 ns Backside: cathode Features / Advantages: ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rate.

Features

/ Advantages:
● Planar passivated chips
● Low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications:
● Antiparallel diode for high frequency switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power supplies (SMPS)
● Uninterruptible power supplies (UPS) Package: TO-220
● I.