DSEI120 - IXYS Corporation

DSEI120 Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 120 IFAVM = 126 A VRRM = 600 V trr = 35 ns VRSM V 600 VRRM V 600 Type A C TO-247 AD C DSEI 120-06A A C A = Anode, C = Cathode Symbol IFRMS IFAVM ÿÿx IFAV y IFRM IFSM Test Conditions TVJ = TVJM TC = 70°C; rectangular, d = 0.5 TC = 110°C; rectangular, d = 0.5 tP < 10 m s; rep. rating, pulse width limited .

Features

q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25°C Mounting torque q q q 357 0.8...1.2 6 q Nm g q q q Symbol Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 70 A; Characteristic Values typ..