DSEI8 - IXYS Corporation

DSEI8 Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 8 IFAVM = 8 A VRRM = 600 V trr = 35 ns VRSM V 640 640 VRRM V 600 600 Type A C TO-263 AA DSEI 8-06AS NC A C (TAB) DSEI 8-06A DSEI 8-06AS Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 115°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50.

Features

International standard package JEDEC TO-220 AC & TO-263 AB Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 q q q q q q q q Symbol Test Conditions typ. TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 8 A; Characteristic Values max. 20 10 1.5 1.3 1.5 0.98 28.7 2.5 mA mA mA V V V mW K/W K/W K/W ns A q q IR VR = VRRM VR = 0.8
• VRRM VR = 0.8
• VRRM TVJ = 150°C TVJ = 25°C q q VF VT0 rT RthJC RthCK RthJA trr IRM q q q For power-loss calculations only TVJ = TVJM 0.5 Applications Antiparallel diode for high .