www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200E4C-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200E4C-34N q IC .... 1200A q VCES .......... 1700V q Insulated Type q 1-.
ITSUBISHI HVIGBT MODULES CM1200E4C-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 75°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 1200 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CM1200DB-34N |
Mitsubishi Electric |
IGBT Module | |
2 | CM1200DC-34N |
Mitsubishi Electric |
IGBT Module | |
3 | CM1200HA-24J |
Powerex Power Semiconductors |
IGBT Module | |
4 | CM1200HA-34H |
Powerex Power Semiconductors |
IGBT Module | |
5 | CM1200HA-34H |
Mitsubishi Electric |
IGBT | |
6 | CM1200HA-50H |
Mitsubishi Electric |
IGBT | |
7 | CM1200HA-66H |
Mitsubishi Electric |
IGBT | |
8 | CM1200HB-50H |
Mitsubishi Electric |
IGBT | |
9 | CM1200HB-66H |
Powerex Power Semiconductors |
IGBT Module | |
10 | CM1200HB-66H |
Mitsubishi Electric |
IGBT | |
11 | CM1200HC-34H |
Mitsubishi Electric |
IGBT | |
12 | CM1200HC-50H |
Powerex Power Semiconductors |
IGBT Module |