CM1200HC-34H - Mitsubishi Electric

CM1200HC-34H IGBT

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200HC-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-34H q IC .... 1200A q VCES .......... 1700V q Insulated Type q 1-el.

Features

polar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 85°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 1200 2400 1200 2400 10400
  –40 ~ +150
  –40 ~ +125
  –40 ~ +125 4000 10 Unit V V A A A A W °C °C °C V.