CM1200HB-50H - Mitsubishi Electric

CM1200HB-50H IGBT

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-50H q IC .... 1200A q VCES .......... 2500V q Insulated Type q 1-el.

Features

MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM I E (Note 2) I EM(Note 2) P C (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 110°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 2500 ±20 1200 2400 1200 2400 15600
  –40 ~ +150
  –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 Unit V V A A A A W °C °C V N
·m N
·m N
·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoi.