www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200DC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DC-34N q IC .... 1200A q VCES .......... 1700V q Insulated Type q 2-el.
sistor) Modules
Jul. 2005
29.5±0.5
5±0.2
28 +1
–0
MITSUBISHI HVIGBT MODULES
CM1200DC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 75°C Pulse Pulse .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CM1200DB-34N |
Mitsubishi Electric |
IGBT Module | |
2 | CM1200E4C-34N |
Mitsubishi Electric |
IGBT | |
3 | CM1200HA-24J |
Powerex Power Semiconductors |
IGBT Module | |
4 | CM1200HA-34H |
Powerex Power Semiconductors |
IGBT Module | |
5 | CM1200HA-34H |
Mitsubishi Electric |
IGBT | |
6 | CM1200HA-50H |
Mitsubishi Electric |
IGBT | |
7 | CM1200HA-66H |
Mitsubishi Electric |
IGBT | |
8 | CM1200HB-50H |
Mitsubishi Electric |
IGBT | |
9 | CM1200HB-66H |
Powerex Power Semiconductors |
IGBT Module | |
10 | CM1200HB-66H |
Mitsubishi Electric |
IGBT | |
11 | CM1200HC-34H |
Mitsubishi Electric |
IGBT | |
12 | CM1200HC-50H |
Powerex Power Semiconductors |
IGBT Module |