www.DataSheet4U.com PRE on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1200HA-50H q IC ........
o n is s it is m h li e: T tric Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS (Tj = 25 °C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part Conditions Ratin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CM1200HA-24J |
Powerex Power Semiconductors |
IGBT Module | |
2 | CM1200HA-34H |
Powerex Power Semiconductors |
IGBT Module | |
3 | CM1200HA-34H |
Mitsubishi Electric |
IGBT | |
4 | CM1200HA-66H |
Mitsubishi Electric |
IGBT | |
5 | CM1200HB-50H |
Mitsubishi Electric |
IGBT | |
6 | CM1200HB-66H |
Powerex Power Semiconductors |
IGBT Module | |
7 | CM1200HB-66H |
Mitsubishi Electric |
IGBT | |
8 | CM1200HC-34H |
Mitsubishi Electric |
IGBT | |
9 | CM1200HC-50H |
Powerex Power Semiconductors |
IGBT Module | |
10 | CM1200HC-50H |
Mitsubishi Electric |
IGBT | |
11 | CM1200HC-66H |
Mitsubishi Electric |
IGBT | |
12 | CM1200HC-90R |
Mitsubishi |
HVIGBT Modules |