CM1200HA-34H - Powerex Power Semiconductors

CM1200HA-34H IGBT Module

MITSUBISHI HVIGBT MODULES CM1200HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HA-34H q IC .... 1200A q VCES .......... 1700V q Insulated Type q 1-element in a pack APPLICATION Inve.

Features

PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ± 20 1200 2400 1200 2400 12500
  –40 ~ +150
  –40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N
·m N
·m N
·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary term.