The CHA2098b is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a P-HEMT process, 0.25µm gate length, via holes through.
■ Broadband performances : 20-40GHz
■ 16dBm output power ( 1dB gain comp. )
■ 19dB ±1.5dB gain
■ Low DC power consumption, 150mA @ 3.5V
■ Chip size : 1.67 X 0.97 X 0.10 mm
Vd1 Vd2,3 IN
OUT
Vg1 Vg2 Vg3
Typical on-wafer results : 25 15 5 -5 -15 -25
10 15 20 25 30 35 40 45 Frequency ( GHz )
Main Characteristics
Tamb. = 25°C
Symbol Fop G P1dB Id
Parameter Operating frequency range Small signal gain Output power .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA2098RBF |
United Monolithic Semiconductors |
20-33GHz High Gain Buffer Amplifier | |
2 | CHA2090 |
United Monolithic Semiconductors |
17-24GHz Low Noise Amplifier | |
3 | CHA2091 |
United Monolithic Semiconductors |
36-40GHz Low Noise Amplifier | |
4 | CHA2092B |
United Monolithic Semiconductors |
18-32GHz Low Noise Amplifier | |
5 | CHA2093 |
United Monolithic Semiconductors |
20-30GHz Low Noise Amplifier | |
6 | CHA2093RBF |
United Monolithic Semiconductors |
20-30GHz Low Noise Amplifier | |
7 | CHA2094B |
United Monolithic Semiconductors |
36-40GHz Low Noise High Gain Amplifier | |
8 | CHA2095A |
United Monolithic Semiconductors |
36-40GHz Low Noise Very High Gain Amplifier | |
9 | CHA2097A |
United Monolithic Semiconductors |
20-40GHz Variable Gain Amplifier | |
10 | CHA2063A |
United Monolithic Semiconductors |
7-13GHz Low Noise Amplifier | |
11 | CHA2066 |
United Monolithic Semiconductors |
10-16GHz Low Noise Amplifier | |
12 | CHA2069 |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier |