CHA2090 - United Monolithic Semiconductors

CHA2090 17-24GHz Low Noise Amplifier

The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard 0.25µm gate length pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features Broadband performance 17-24GHz 2.0dB noise figure 23dB gain, ± 1dB gain.

Features

Broadband performance 17-24GHz 2.0dB noise figure 23dB gain, ± 1dB gain flatness Low DC power consumption, 55mA Chip size: 2,17 x 1,27 x 0.1mm 30 12 25 10 20 8 15 6 10 4 52 00 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 Frequency ( GHz ) On wafer typical measurements Main Characteristics Tamb = +25°C, Vd=4.5V, Pads B,D,E=GND Symbol Parameter Min Typ Max Fop Operating frequency range 17 24 NF Noise figure 2.0 3.0 G Gain 19 23 VSWRin Input VSWR 2:1 VSWRout Output VSWR 2:1 ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Unit GHz dB.