The CHA2093 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. IN Vd 50 25 OUT Vg 1 Vg 2 Gain ( dB ) Noise Figure ( dB ) Main Features ¦ Broad band performanc.
¦ Broad band performance 20-30GHz ¦ 2.2dB noise figure, 20-30GHz ¦ 15dB gain, ± 0.5dB gain flatness ¦ Low DC power consumption, 50mA ¦ 20dBm 3rd order intercept point ¦ Chip size : 1.67 x 1.03 x 0.1mm Main Characteristics Tamb = +25°C 20 10 18 9 16 8 14 7 12 6 10 5 84 63 42 21 00 10 15 20 25 30 35 40 Frequency ( GHz ) On wafer typical measurements. Symbol Parameter NF Noise figure, 20-30GHz G Gain ∆G Gain flatness Min Typ Max Unit 2.2 3.0 dB 13 15 dB ± 0.5 ± 1.0 dB ESD Protections : Electrostatic discharge sensitive device observe handli.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA2090 |
United Monolithic Semiconductors |
17-24GHz Low Noise Amplifier | |
2 | CHA2091 |
United Monolithic Semiconductors |
36-40GHz Low Noise Amplifier | |
3 | CHA2092B |
United Monolithic Semiconductors |
18-32GHz Low Noise Amplifier | |
4 | CHA2093RBF |
United Monolithic Semiconductors |
20-30GHz Low Noise Amplifier | |
5 | CHA2094B |
United Monolithic Semiconductors |
36-40GHz Low Noise High Gain Amplifier | |
6 | CHA2095A |
United Monolithic Semiconductors |
36-40GHz Low Noise Very High Gain Amplifier | |
7 | CHA2097A |
United Monolithic Semiconductors |
20-40GHz Variable Gain Amplifier | |
8 | CHA2098B |
United Monolithic Semiconductors |
20-40GHz High Gain Buffer Amplifier | |
9 | CHA2098RBF |
United Monolithic Semiconductors |
20-33GHz High Gain Buffer Amplifier | |
10 | CHA2063A |
United Monolithic Semiconductors |
7-13GHz Low Noise Amplifier | |
11 | CHA2066 |
United Monolithic Semiconductors |
10-16GHz Low Noise Amplifier | |
12 | CHA2069 |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier |