Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The CHA2097a is a variable gain broadband threestage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through t.
¦ Broadband performances : 20-40GHz ¦ 14dBm output power ( 1dB gain comp. ) ¦ 18dB ±1.5dB gain ¦ 10dB gain control range. ¦ Low DC power consumption, 140mA @ 3.5V ¦ Chip size : 2.04 X 0.97 X 0.10 mm Gain & Rloss (dB) In Vctrl Vd1 Vd23 Out Vg1 Vg2 Vg3 25 20 15 10 5 0 -5 -10 -15 -20 -25 0 Typical on wafer measurements S22 S11 10 20 30 40 50 60 frequency (GHz) Main Characteristics Tamb. = 25°C Symbol Parameter Min T.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CHA2090 |
United Monolithic Semiconductors |
17-24GHz Low Noise Amplifier |
|
| 2 | CHA2091 |
United Monolithic Semiconductors |
36-40GHz Low Noise Amplifier |
|
| 3 | CHA2092B |
United Monolithic Semiconductors |
18-32GHz Low Noise Amplifier |
|
| 4 | CHA2093 |
United Monolithic Semiconductors |
20-30GHz Low Noise Amplifier |
|
| 5 | CHA2093RBF |
United Monolithic Semiconductors |
20-30GHz Low Noise Amplifier |
|
| 6 | CHA2094B |
United Monolithic Semiconductors |
36-40GHz Low Noise High Gain Amplifier |
|
| 7 | CHA2095A |
United Monolithic Semiconductors |
36-40GHz Low Noise Very High Gain Amplifier |
|
| 8 | CHA2098B |
United Monolithic Semiconductors |
20-40GHz High Gain Buffer Amplifier |
|
| 9 | CHA2098RBF |
United Monolithic Semiconductors |
20-33GHz High Gain Buffer Amplifier |
|
| 10 | CHA2063A |
United Monolithic Semiconductors |
7-13GHz Low Noise Amplifier |
|
| 11 | CHA2066 |
United Monolithic Semiconductors |
10-16GHz Low Noise Amplifier |
|
| 12 | CHA2069 |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier |
|