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CHA2069 |
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| Part Number | CHA2069 |
| Manufacturer | United Monolithic Semiconductors |
| Description | The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air b... |
| Features |
¦ Broad band performance 18-31GHz ¦ 2.5dB noise figure ¦ 22dB gain, ± 1dB gain flatness ¦ Low DC power consumption, 55mA ¦ 20dBm 3rd order intercept point ¦ Chip size : 2,170 x 1,270x 0.1mm
24 22 20 18 16 14 12 10
8 6 4 2 0
14 16 18 20 22 24 26 28 30 32 34
Frequency ( GHz )
On wafer typical measurements.
Main Characteristics
Tamb = +25°C
Symbol
Parameter
NF Noise figure,18-31GHz
G Gain
∆G Gain flatness
Min Typ Max Unit
2.5 3.5 dB
18 22
dB
± 1 ± 1.5 dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20679273 - 8-Sep-99
1/8 Spe... |
| Document |
 CHA2069 Data Sheet
PDF 132.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CHA2063A |
United Monolithic Semiconductors |
7-13GHz Low Noise Amplifier |
|
| 2 | CHA2066 |
United Monolithic Semiconductors |
10-16GHz Low Noise Amplifier |
|
| 3 | CHA2069-99F |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier |
|
| 4 | CHA2069-FAA |
United Monolithic Semiconductors |
16-32GHz Low Noise Amplifier |
|
| 5 | CHA2069-QDG |
United Monolithic Semiconductors |
18-30GHz Low Noise Amplifier |
|