CHA2069-FAA |
Part Number | CHA2069-FAA |
Manufacturer | United Monolithic Semiconductors |
Description | The CHA2069-FAA is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, a... |
Features |
■ Broadband performance 16-32GHz ■ 2.5dB typical Noise Figure ■ 20dBm 3rd order intercept point ■ 22dB gain ■ Low DC power consumption ■ 6x6mm² metal ceramic hermetic package Linear Gain 30 25 20 15 10 5 0 10 +25 C -40 C +85 C 15 20 25 30 Frequency (GHz) 35 40 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 16 32 GHz NF Noise figure 2.5 dB G Small signal Gain 22 dB ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA2069-FAA2356 - 21 Dec 12 1/10 Specifications subj... |
Document |
CHA2069-FAA Data Sheet
PDF 327.30KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA2069-99F |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier | |
2 | CHA2069-QDG |
United Monolithic Semiconductors |
18-30GHz Low Noise Amplifier | |
3 | CHA2069 |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier | |
4 | CHA2069RAF |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier | |
5 | CHA2063A |
United Monolithic Semiconductors |
7-13GHz Low Noise Amplifier |