CHA2066 |
Part Number | CHA2066 |
Manufacturer | United Monolithic Semiconductors |
Description | The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and ele... |
Features |
Gain ( dB )
20 18 16 14 12 10 8 6 4 2 0 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz )
5 Noise Figure ( dB )
■ Broad band performance 10-16GHz ■ 2.0dB noise figure, 10-16GHz ■ 16dB gain, ± 0.5dB gain flatness ■ Low DC power consumption, 50mA ■ 20dBm 3rd order intercept point ■ Chip size : 1,52 x 1,08 x 0.1mm 4 3 2 1 0 On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol NF G ∆G Parameter Noise figure, 10-16GHz Gain Gain flatness 14 Min Typ 2.0 16 ± 0.5 ± 1.0 Max 2.5 Unit dB dB dB ESD Protections : Electrostatic discharge sensitive device observe handling... |
Document |
CHA2066 Data Sheet
PDF 128.01KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA2063A |
United Monolithic Semiconductors |
7-13GHz Low Noise Amplifier | |
2 | CHA2069 |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier | |
3 | CHA2069-99F |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier | |
4 | CHA2069-FAA |
United Monolithic Semiconductors |
16-32GHz Low Noise Amplifier | |
5 | CHA2069-QDG |
United Monolithic Semiconductors |
18-30GHz Low Noise Amplifier |