CED4301/CEU4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -20A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(.
-40V, -20A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -40 ±20 -20 -80 31 0.25 Operating and Store Temper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU4311 |
CET |
P-Channel MOSFET | |
2 | CEU4060A |
CET |
N-Channel MOSFET | |
3 | CEU4060AL |
CET |
N-Channel MOSFET | |
4 | CEU40N10 |
Chino-Excel Technology |
N-Channel MOSFET | |
5 | CEU41A2 |
CET |
N-Channel MOSFET | |
6 | CEU4201 |
Chino-Excel Technology |
P-Channel MOSFET | |
7 | CEU4204 |
CET |
N-Channel MOSFET | |
8 | CEU4259 |
CET |
N-Channel MOSFET | |
9 | CEU4269 |
CET |
Dual Enhancement Mode Field Effect Transistor | |
10 | CEU4269A |
CET |
Dual-Channel MOSFET | |
11 | CEU4279 |
CET |
Dual MOSFET | |
12 | CEU4531 |
CET |
P-Channel MOSFET |