CEU4259 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -12A , RDS(ON) = 43mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead free product is acquired. TO-252-5L package..
40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -12A , RDS(ON) = 43mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead free product is acquired. TO-252-5L package. S1 G1 D1/D2 S2 G2 D1/D2 CEU SERIES TO-252-5L D1/D2 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU4201 |
Chino-Excel Technology |
P-Channel MOSFET | |
2 | CEU4204 |
CET |
N-Channel MOSFET | |
3 | CEU4269 |
CET |
Dual Enhancement Mode Field Effect Transistor | |
4 | CEU4269A |
CET |
Dual-Channel MOSFET | |
5 | CEU4279 |
CET |
Dual MOSFET | |
6 | CEU4060A |
CET |
N-Channel MOSFET | |
7 | CEU4060AL |
CET |
N-Channel MOSFET | |
8 | CEU40N10 |
Chino-Excel Technology |
N-Channel MOSFET | |
9 | CEU41A2 |
CET |
N-Channel MOSFET | |
10 | CEU4301 |
CET |
P-Channel MOSFET | |
11 | CEU4311 |
CET |
P-Channel MOSFET | |
12 | CEU4531 |
CET |
P-Channel MOSFET |