CEU4204 - CET

CEU4204 N-Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 24A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED4204/CEU4204 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I.

Features

40V, 24A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED4204/CEU4204 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 40 Units V V A A W W/ C C ±20 24 90 31 0.25 -55 to 150 Maximum Power Dissipation @ TC = 25.