CEU40N10 - Chino-Excel Technology

CEU40N10 N-Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED40N10/CEU40N10 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMU.

Features

100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED40N10/CEU40N10 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100 Units V V A A W W/ C C ±20 37 148 93.8 0.75 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 .