CEU4279 - CET

CEU4279 Dual MOSFET

Dual Enhancement Mode Field Effect Transistor (N and P Channel) CED4279/CEU4279 D1/D2 FEATURES 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquire.

Features

40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-252-4L package. S1 G1 S2 G2 CEU SERIES TO-252-4L D1/D2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol N-Channel VDS VGS ID e IDM PD TJ,Tstg 40 P-Channel 40 Units V V A A W W/ C C ±20 14 56 10.