P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED4201/CEU4201 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-2.
-40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED4201/CEU4201 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -40 Units V V A A W W/ C C ±20 -28 -112 38 0.25 -55 to 150 Maximum Power Dissipation @.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU4204 |
CET |
N-Channel MOSFET | |
2 | CEU4259 |
CET |
N-Channel MOSFET | |
3 | CEU4269 |
CET |
Dual Enhancement Mode Field Effect Transistor | |
4 | CEU4269A |
CET |
Dual-Channel MOSFET | |
5 | CEU4279 |
CET |
Dual MOSFET | |
6 | CEU4060A |
CET |
N-Channel MOSFET | |
7 | CEU4060AL |
CET |
N-Channel MOSFET | |
8 | CEU40N10 |
Chino-Excel Technology |
N-Channel MOSFET | |
9 | CEU41A2 |
CET |
N-Channel MOSFET | |
10 | CEU4301 |
CET |
P-Channel MOSFET | |
11 | CEU4311 |
CET |
P-Channel MOSFET | |
12 | CEU4531 |
CET |
P-Channel MOSFET |