CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D .
30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a ID IDM 102 72 408 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 83 0.5.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP83A3 |
CET |
N-Channel MOSFET | |
2 | CEP830G |
CET |
N-Channel MOSFET | |
3 | CEP8030L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
4 | CEP8030LA |
CET |
N-Channel MOSFET | |
5 | CEP803AL |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
6 | CEP8060 |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | CEP8060L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | CEP8060LR |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
9 | CEP8060R |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
10 | CEP80N15 |
CET |
N-Channel MOSFET | |
11 | CEP80N75 |
CET |
N-Channel MOSFET | |
12 | CEP8101A |
ChipExtra |
Wide-Input Sensorless CC/CV Step-Down DC/DC Converter |