CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP830G CEB830G VDSS 500V 500V CEF830G 500V RDS(ON) 1.5Ω 1.5Ω 1.5Ω ID @VGS 5A 10V 5A 10V 5A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-P.
Type CEP830G CEB830G VDSS 500V 500V CEF830G 500V RDS(ON) 1.5Ω 1.5Ω 1.5Ω ID @VGS 5A 10V 5A 10V 5A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS VGS ID IDM f 500 ±30 5 20 5e 20 e Maximum Power Dissipation @ T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP83A3 |
CET |
N-Channel MOSFET | |
2 | CEP83A3G |
CET |
N-Channel MOSFET | |
3 | CEP8030L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
4 | CEP8030LA |
CET |
N-Channel MOSFET | |
5 | CEP803AL |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
6 | CEP8060 |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | CEP8060L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | CEP8060LR |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
9 | CEP8060R |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
10 | CEP80N15 |
CET |
N-Channel MOSFET | |
11 | CEP80N75 |
CET |
N-Channel MOSFET | |
12 | CEP8101A |
ChipExtra |
Wide-Input Sensorless CC/CV Step-Down DC/DC Converter |