CEP80N15 - CET

CEP80N15 N-Channel MOSFET

CEP80N15/CEB80N15 CEF80N15 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP80N15 CEB80N15 CEF80N15 VDSS 150V 150V 150V RDS(ON) 19mΩ 19mΩ 19mΩ ID 76A 76A 76A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 .

Features

Type CEP80N15 CEB80N15 CEF80N15 VDSS 150V 150V 150V RDS(ON) 19mΩ 19mΩ 19mΩ ID 76A 76A 76A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 & TO-220F full-pak for through hole. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain C.