CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220.
30V, 100A, RDS(ON) = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 30 Units V V A A W W/ C mJ A C ±20 100 400 100 0.67 875 35 -55 to 175 Maximum Power Dissipation @ TC = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP83A3G |
CET |
N-Channel MOSFET | |
2 | CEP830G |
CET |
N-Channel MOSFET | |
3 | CEP8030L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
4 | CEP8030LA |
CET |
N-Channel MOSFET | |
5 | CEP803AL |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
6 | CEP8060 |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | CEP8060L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | CEP8060LR |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
9 | CEP8060R |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
10 | CEP80N15 |
CET |
N-Channel MOSFET | |
11 | CEP80N75 |
CET |
N-Channel MOSFET | |
12 | CEP8101A |
ChipExtra |
Wide-Input Sensorless CC/CV Step-Down DC/DC Converter |