N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP80N75 CEB80N75 CEF80N75 VDSS 75V 75V 75V RDS(ON) 13mΩ 13mΩ 13mΩ ID 80A 80A 80A e CEP80N75/CEB80N75 CEF80N75 @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pa.
Type CEP80N75 CEB80N75 CEF80N75 VDSS 75V 75V 75V RDS(ON) 13mΩ 13mΩ 13mΩ ID 80A 80A 80A e CEP80N75/CEB80N75 CEF80N75 @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. D G G D S S CEB SERIES TO-263(DD-PAK) G G CEP SERIES TO-220 D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP80N15 |
CET |
N-Channel MOSFET | |
2 | CEP8030L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
3 | CEP8030LA |
CET |
N-Channel MOSFET | |
4 | CEP803AL |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
5 | CEP8060 |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
6 | CEP8060L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | CEP8060LR |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | CEP8060R |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
9 | CEP8101A |
ChipExtra |
Wide-Input Sensorless CC/CV Step-Down DC/DC Converter | |
10 | CEP8113A |
ChipExtra |
Wide-Input Sensorless CC/CV Step-Down DC/DC Converter | |
11 | CEP830G |
CET |
N-Channel MOSFET | |
12 | CEP83A3 |
CET |
N-Channel MOSFET |