CEP83A3G |
Part Number | CEP83A3G |
Manufacturer | CET |
Description | CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ @VGS = 4.5V. Super high dense cell design for ext... |
Features |
30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
ID IDM
102 72 408
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
83 0.5... |
Document |
CEP83A3G Data Sheet
PDF 373.79KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CEP83A3 |
CET |
N-Channel MOSFET | |
2 | CEP830G |
CET |
N-Channel MOSFET | |
3 | CEP8030L |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
4 | CEP8030LA |
CET |
N-Channel MOSFET | |
5 | CEP803AL |
Chino-Excel Technology |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |