Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5299] 16.0 3.4 5.
· High speed : tf=100ns typ.
· High breakdown voltage : VCBO=1500V.
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC5299]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Param.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C5291 |
Sanyo Semicon Device |
2SC5291 |
|
| 2 | C5294 |
Panasonic Semiconductor |
2SC5294 |
|
| 3 | C5296 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | C5296 |
SavantIC |
Silicon NPN Power Transistors |
|
| 5 | C5297 |
Sanyo Semicon Device |
2SC5297 |
|
| 6 | C5298 |
Sanyo Semicon Device |
2SC5298 |
|
| 7 | C5200 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | C5200N |
Toshiba |
NPN Transistor |
|
| 9 | C5201 |
Toshiba |
2SC5201 |
|
| 10 | C5206 |
Hitachi |
Silicon NPN Transistor |
|
| 11 | C5207A |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 12 | C520A |
ETC |
2SC520A |
|