Ordering number : ENN5282A 2SC5291 NPN Epitaxial Planar Silicon Transistor 2SC5291 High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • Large current capacity. • Can be provided in taping. • 9.5mm onboard mounting height. Package Dimensions unit : mm 2084B [2SC5291] 10.5 4.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Sp.
• Adoption of FBET, MBIT processes.
• Large current capacity.
• Can be provided in taping.
• 9.5mm onboard mounting height.
Package Dimensions
unit : mm 2084B
[2SC5291]
10.5
4.5 1.9
1.2
2.6 1.4
1.0 8.5
1.2
1.6 0.5
123
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta=25°C
2.5 Conditions
Parameter
Col.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5294 |
Panasonic Semiconductor |
2SC5294 | |
2 | C5296 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
3 | C5296 |
SavantIC |
Silicon NPN Power Transistors | |
4 | C5297 |
Sanyo Semicon Device |
2SC5297 | |
5 | C5298 |
Sanyo Semicon Device |
2SC5298 | |
6 | C5299 |
Sanyo Semiconductor Corporation |
2SC5299 | |
7 | C5200 |
Toshiba |
Silicon NPN Transistor | |
8 | C5200N |
Toshiba |
NPN Transistor | |
9 | C5201 |
Toshiba |
2SC5201 | |
10 | C5206 |
Hitachi |
Silicon NPN Transistor | |
11 | C5207A |
Hitachi Semiconductor |
Silicon NPN Transistor | |
12 | C520A |
ETC |
2SC520A |