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Ordering number : EN5292 www.DataSheet4U.com NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High Speed : tf=100ns typ. • High Breakdown voltage : VCBO=1500V. • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Packag.
• High Speed : tf=100ns typ.
• High Breakdown voltage : VCBO=1500V.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.
Package Dimensions
unit: mm 2039C-TO3PML
[2SC5298]
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1 : Base 2 : Collector 3 : Emitter SANYO: TO3PML
Tc=25°C
Ratings 1500 800 6 10 2.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C5291 |
Sanyo Semicon Device |
2SC5291 |
|
| 2 | C5294 |
Panasonic Semiconductor |
2SC5294 |
|
| 3 | C5296 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | C5296 |
SavantIC |
Silicon NPN Power Transistors |
|
| 5 | C5297 |
Sanyo Semicon Device |
2SC5297 |
|
| 6 | C5299 |
Sanyo Semiconductor Corporation |
2SC5299 |
|
| 7 | C5200 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | C5200N |
Toshiba |
NPN Transistor |
|
| 9 | C5201 |
Toshiba |
2SC5201 |
|
| 10 | C5206 |
Hitachi |
Silicon NPN Transistor |
|
| 11 | C5207A |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 12 | C520A |
ETC |
2SC520A |
|