·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collect.
=5A;IB=1.25 A Base-emitter saturation voltage IC=5A;IB=1.25 A VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 IEBO ICBO ICES hFE-1 Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain VEB=4V IC=0 VCB=800V ;IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5V hFE-2 DC current gain IC=5A ; VCE=5V Switching times tstg Storage time tf Fall time IC=4A;RL=50A IB1=0.8A; IB2=-1.6A VCC=200V MIN TYP. MAX UNIT 5V 1.5 V 800 V 40 130 mA 10 µA 1 mA 15 25 47 3.0 0.1 0.2 µs µs 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Product .
w w w . D a t a S h e e t . c o . k r Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Tr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5291 |
Sanyo Semicon Device |
2SC5291 | |
2 | C5294 |
Panasonic Semiconductor |
2SC5294 | |
3 | C5297 |
Sanyo Semicon Device |
2SC5297 | |
4 | C5298 |
Sanyo Semicon Device |
2SC5298 | |
5 | C5299 |
Sanyo Semiconductor Corporation |
2SC5299 | |
6 | C5200 |
Toshiba |
Silicon NPN Transistor | |
7 | C5200N |
Toshiba |
NPN Transistor | |
8 | C5201 |
Toshiba |
2SC5201 | |
9 | C5206 |
Hitachi |
Silicon NPN Transistor | |
10 | C5207A |
Hitachi Semiconductor |
Silicon NPN Transistor | |
11 | C520A |
ETC |
2SC520A | |
12 | C5213 |
Isahaya Electronics |
2SC5213 |