Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (Ta=25˚C) Ratings 1500 1600 1500 1600 600 5 30 20 10 120 3.5 150 –55 to +1.
φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 www.DataSheet4U.com 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5294 2SC5294A 2SC5294 2SC5294A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 V 5° V 1 2 3 2.0 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V A A A W ˚C ˚C 1:Base 2:Collector.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5291 |
Sanyo Semicon Device |
2SC5291 | |
2 | C5296 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
3 | C5296 |
SavantIC |
Silicon NPN Power Transistors | |
4 | C5297 |
Sanyo Semicon Device |
2SC5297 | |
5 | C5298 |
Sanyo Semicon Device |
2SC5298 | |
6 | C5299 |
Sanyo Semiconductor Corporation |
2SC5299 | |
7 | C5200 |
Toshiba |
Silicon NPN Transistor | |
8 | C5200N |
Toshiba |
NPN Transistor | |
9 | C5201 |
Toshiba |
2SC5201 | |
10 | C5206 |
Hitachi |
Silicon NPN Transistor | |
11 | C5207A |
Hitachi Semiconductor |
Silicon NPN Transistor | |
12 | C520A |
ETC |
2SC520A |