C5206 - Hitachi

C5206 Silicon NPN Transistor

2SC5206 Silicon NPN Triple Diffused Application High power switching Features • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2SC5206 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector .

Features

• High breakdown voltage VCBO = 500 V
• Isolated package TO-220FM Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2SC5206 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC PC
*1 Tj Tstg Ratings 500 400 7 5 10 1.8 25 150
  –55 to +150 Unit V V V A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min.