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BUZ32 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ32 Voss 200 V Ros(on) 0.4 0 10 9.5 A • 200 VOLTS FOR TELECOMS APPLICATIONS • HIGH CURRENT - FOR PULSED LASER DRIVES • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) • • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • SWITCHING MODE POWER SUPPL.
ating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1)
• Introduced in 1989 week 1
June 1988
200
V
200
V
±20
V
9.5
A
38
A
75
W
- 55 to 150
°C
150
°C
E
55/150/56
1/4
195
BUZ32
THERMAL DATA
Rthj _ case Thermal resistance junction-case Rthj _ amb Thermal resistance junction-ambient
max max
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameters
Test Conditions
1.67 75
°CIW °C/W
OFF
V(BR) DSS Drain-source breakdown voltage
ID= 250 JJ-A
VGs= 0
200
IDSS
Zero gate voltage
VDS = Max Rating
drain curre.
BUZ32 - Siemens Semiconductor Group
BUZ 32 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ.
BUZ32 - Intersil Corporation
BUZ32 Semiconductor Data Sheet October 1998 File Number 2416.1 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Featur.
BUZ32 - Infineon Technologies AG
SIPMOS ® Power Transistor BUZ 32 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type .
BUZ32 - INCHANGE
isc N-Channel Mosfet Transistor BUZ32 ·FEATURES ·9.5A, 200V ·RDS(ON) = 0.400Ω ·SOA is Power Dissipation Limited ·Nanos.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUZ305 |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ305 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | BUZ307 |
Siemens Semiconductor Group |
Power Transistor |
|
| 4 | BUZ307 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | BUZ308 |
Siemens Semiconductor Group |
Power Transistor |
|
| 6 | BUZ308 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | BUZ30A |
Siemens Semiconductor Group |
Power Transistor |
|
| 8 | BUZ30A |
Infineon Technologies AG |
Power Transistor |
|
| 9 | BUZ30A |
INCHANGE |
N-Channel MOSFET |
|
| 10 | BUZ30AH |
Infineon |
Power Transistor |
|
| 11 | BUZ30AH |
INCHANGE |
N-Channel MOSFET |
|
| 12 | BUZ30AH3045A |
INCHANGE |
N-Channel MOSFET |
|