BUZ30AH - Infineon

BUZ30AH Power Transistor

SIPMOS ® Power Transistor BUZ 30A H • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2--21 Pin 1 G Pin 2 D Pin 3 S Type BUZ 30A H VDS 200 V ID 21 A RDS(on) 0.13 Ω Maximum Ratings Parameter Continuous drain current TC = 26 ˚C Pulsed drain current TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,per.

Features

specified Parameter Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = 13.5 A Symbol min. Values typ. max. V(BR)DSS 200 VGS(th) 2.1 IDSS - - IGSS - RDS(on) - 3 0.1 10 10 0.1 4 1 100 100 0.13 Unit V µA nA Ω Rev. 2.5 Page 2 2010-07-02 BUZ 30A H Electrical Characteristics, at Tj = 25˚C, unless other.