BUZ307 - Siemens Semiconductor Group

BUZ307 Power Transistor

BUZ 307 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 307 VDS 800 V ID 3A RDS(on) 3Ω Package TO-218 AA Ordering Code C67078-S3100-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3 Unit A ID IDpuls 12 TC = 35 °C Pulsed drain current TC = 25 °C Avalanche current,li.

Features

tatic Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 800 3 0.1 10 10 2.7 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 3 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 1.5 A Semiconductor Group 2 09/96 BUZ 307 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Charact.