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BUZ32 |
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| Part Number | BUZ32 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | SIPMOS ® Power Transistor BUZ 32 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 32 200 V 9.5 A 0.4 Ω TO-220 A... |
| Features |
r
Symbol min.
Values typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
200 -
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C
Gate threshold voltage
VGS(th)
2.1 3 4 µA 0.1 10 1 100 nA 10 100
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C
Gate-source leakage current
IGSS
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
0.3 0.4
Ω
VGS = 10 V, ID = 6 A
Data Sheet
2
05.99
BUZ 32
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dyna... |
| Document |
 BUZ32 Data Sheet
PDF 90.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ305 |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ305 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | BUZ307 |
Siemens Semiconductor Group |
Power Transistor |
|
| 4 | BUZ307 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | BUZ308 |
Siemens Semiconductor Group |
Power Transistor |
|