BUZ32 |
Part Number | BUZ32 |
Manufacturer | INCHANGE |
Description | isc N-Channel Mosfet Transistor BUZ32 ·FEATURES ·9.5A, 200V ·RDS(ON) = 0.400Ω ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·M... |
Features |
·9.5A, 200V ·RDS(ON) = 0.400Ω ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE ... |
Document |
BUZ32 Data Sheet
PDF 225.68KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | BUZ305 |
Siemens Semiconductor Group |
Power Transistor | |
2 | BUZ305 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | BUZ307 |
Siemens Semiconductor Group |
Power Transistor | |
4 | BUZ307 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | BUZ308 |
Siemens Semiconductor Group |
Power Transistor |