Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
isc N-Channel Mosfet Transistor ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS .
·High speed switching
·Low RDS(ON)
·Easy driver for cost effective application
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Automotive power actuator drivers
·Motor controls
·DC-DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=31℃
7.5
A
IDM
Drain Current-Single Plused
30
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-5.
BUZ305 - Siemens Semiconductor Group
BUZ 305 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BU.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUZ307 |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ307 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | BUZ308 |
Siemens Semiconductor Group |
Power Transistor |
|
| 4 | BUZ308 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | BUZ30A |
Siemens Semiconductor Group |
Power Transistor |
|
| 6 | BUZ30A |
Infineon Technologies AG |
Power Transistor |
|
| 7 | BUZ30A |
INCHANGE |
N-Channel MOSFET |
|
| 8 | BUZ30AH |
Infineon |
Power Transistor |
|
| 9 | BUZ30AH |
INCHANGE |
N-Channel MOSFET |
|
| 10 | BUZ30AH3045A |
INCHANGE |
N-Channel MOSFET |
|
| 11 | BUZ31 |
Siemens Semiconductor Group |
Power Transistor |
|
| 12 | BUZ31 |
Infineon Technologies AG |
Power Transistor |
|