BUP300 Siemens Semiconductor Group IGBT Datasheet, en stock, prix

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BUP300

Siemens Semiconductor Group
BUP300
BUP300 BUP300
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Part Number BUP300
Manufacturer Siemens Semiconductor Group
Description BUP 300 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 300 Maximum Ratings Parameter Collector-emitter v...
Features hJC ≤ 3.1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC = 0.1 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 1.5 A, Tj = 25 °C VGE = 15 V, IC = 1.5 A, Tj = 125 °C VGE = 15 V, IC = 1.5 A, Tj = 150 °C Zero gate voltage collector current ICES 25 100 µA VCE = 1000 V, VGE = 0 V, Tj = 25 °C VCE = 1000 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 100 nA VGE = 20 V, VCE = 0...

Document Datasheet BUP300 Data Sheet
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