4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package. 1 2 3 MAM121 g CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. s Top view Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL .
• Direct interface to C-MOS, TTL etc
• Low threshold voltage
• High speed switching
• No secondary breakdown. APPLICATIONS
• Line current interrupter in telephone sets
• Relay, high speed and line transformer drivers.
handbook, halfpage
BSP255
PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d gate drain source drain DESCRIPTION
4
d
DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package.
1 2 3
MAM121
g
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSP250 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
2 | BSP254 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
3 | BSP254A |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
4 | BSP20 |
NXP |
NPN high-voltage transistors | |
5 | BSP204 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
6 | BSP204A |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
7 | BSP205 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
8 | BSP206 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
9 | BSP20A |
Kexin |
NPN Silicon Epitaxial Transistor | |
10 | BSP20AT1 |
Motorola Inc |
SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT | |
11 | BSP220 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
12 | BSP225 |
NXP |
P-channel enhancement mode vertical D-MOS transistor |