BSP220 - NXP

BSP220 P-channel enhancement mode vertical D-MOS transistor

P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM121 BSP220 QUICK REFERENCE DATA SYMBOL −VDS −ID RDS(on) −VGS(th) PARAMETER drain-source voltage drain current drain-source on-resis.

Features

• Low RDS(on)
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM121 BSP220 QUICK REFERENCE DATA SYMBOL −VDS −ID RDS(on) −VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value −ID = 200 mA −VGS = 10 V CONDITIONS MAX. UNIT 200 225 12 2.8 V mA Ω V PIN CONFIG.