BSP250 - NXP

BSP250 P-channel enhancement mode vertical D-MOS transistor

handbook, halfpage BSP250 PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d DESCRIPTION gate drain source drain 4 d P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. g CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. 1 Top.

Features

• High-speed switching
• No secondary breakdown
• Very low on-resistance. APPLICATIONS
• Low-loss motor and actuator drivers
• Power switching. DESCRIPTION handbook, halfpage BSP250 PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d DESCRIPTION gate drain source drain 4 d P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. g CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. 1 Top view 2 3 MAM121 s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMB.