P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM121 BSP225 QUICK REFERENCE DATA SYMBOL −VDS −ID RDS(on) −VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistan.
• Low RDS(on)
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain
1 Top view 2 3
MAM121
BSP225
QUICK REFERENCE DATA SYMBOL −VDS −ID RDS(on) −VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value −ID = 200 mA −VGS = 10 V −ID = 1 mA VGS = VDS CONDITIONS MAX. 250 225 15 2.8 UNIT V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSP220 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
2 | BSP20 |
NXP |
NPN high-voltage transistors | |
3 | BSP204 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
4 | BSP204A |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
5 | BSP205 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
6 | BSP206 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
7 | BSP20A |
Kexin |
NPN Silicon Epitaxial Transistor | |
8 | BSP20AT1 |
Motorola Inc |
SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT | |
9 | BSP230 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
10 | BSP250 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
11 | BSP254 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
12 | BSP254A |
NXP |
P-channel enhancement mode vertical D-MOS transistor |