BSP125 - Siemens Semiconductor Group

BSP125 SIPMOS Small-Signal Transistor (N channel Enhancement mode)

BSP 125 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V Pin 1 G Type BSP 125 Type BSP 125 BSP 125 Pin 2 D Pin 3 S Pin 4 D VDS 600 V ID 0.12 A RDS(on) 45 Ω Package SOT-223 Marking BSP 125 Ordering Code Q62702-S654 Q67000-S284 Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Drain source volt.

Features

K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 600 2 10 8 10 30 2.5 100 50 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.5 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS nA µA nA Ω 45 VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS RDS(on).